Efficiency limitations of thermally evaporated thin-film SnS solar cells
Efficiency limitations of thermally evaporated thin-film SnS solar cells
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DOI：
10.1088/0022-3727/46/30/305109
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发表时间：
2013-07-31
影响因子：
3.4
通讯作者：
Jaegermann, W.
中科院分区：
文献类型：
--
作者：
Schneikart, A.;Schimper, H-J;Jaegermann, W.
采用热蒸发法制备了以SnS为吸收剂的薄膜太阳能电池。使用Al：ZnO涂覆的玻璃作为与本征ZnO缓冲层和/或CdS窗口层和金背接触的前接触，将电池构建在覆层配置中。测定了器件的IV特性和外量子效率。最佳CdS/SnS太阳能电池的转换效率为1.6%，短路电流密度为19 mA cm（-2），开路电压为217 mV。此外，在界面AZO/SnS，CdS/SnS和SnS/Au的能带排列确定与原位X射线光电子能谱相关的开路电压限制的研究太阳能电池器件结构。
Thin-film solar cells with SnS as absorber material were prepared by thermal evaporation of SnS. The cells were built in a superstrate configuration using Al : ZnO coated glass as front contact with an intrinsic ZnO buffer layer and/or CdS window layer and a gold back contact. The IV-characteristics and external quantum efficiency of the devices were determined. The best CdS/SnS solar cell showed a conversion efficiency of 1.6%, a short circuit current density of 19 mA cm(-2) and an open circuit voltage of 217 mV. Moreover, band alignments at the interfaces AZO/SnS, CdS/SnS and SnS/Au were determined with in situ x-ray photoelectron spectroscopy to correlate the open circuit voltage limitations of the investigated solar cell device structures.