Deep ultraviolet light-emitting diodes
Deep ultraviolet light-emitting diodes
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DOI：
10.1002/pssa.200565266
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发表时间：
2006-05-01
影响因子：
2
通讯作者：
Khan, A.
中科院分区：
文献类型：
--
作者：
Hu, X.;Deng, J.;Khan, A.
我们报告了发射波长为 254 至 340 nm 的 AlGaN 基深紫外发光二极管 (LED) 的开发，重点关注 280 nm LED 效率的提高。在最佳器件结构下，UV LED 效率很大程度上取决于 AlGaN 材料的质量。毫瓦功率级 LED 的光谱范围为 254-340 nm，280 nm LED 的功率在 20 mA DC 时达到 2.5 mW。 (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆。
We report on the development of AlGaN-based deep UV light emitting diodes (LEDs) with emission wavelengths from 254 to 340 nm, focusing on the improvement of 280 nm LEDs efficiency. Under optimal device structure the UV LEDs efficiency was found to strongly depend on the AlGaN material quality. Milliwatt-power level LEDs were demonstrated for the 254-340 nm spectral range, and for 280 nm LEDs powers reaching 2.5 mW was achieved at 20 mA DC. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.