3D Electro-thermal modelling of bonding and metallization ageing effects for reliability improvement of power MOSFETs
3D Electro-thermal modelling of bonding and metallization ageing effects for reliability improvement of power MOSFETs
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DOI：
10.1016/j.microrel.2011.06.018
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发表时间：
2011-09-01
影响因子：
1.6
通讯作者：
Dorkel, J. M.
中科院分区：
文献类型：
--
作者：
Azoui, T.;Tounsi, P.;Dorkel, J. M.
本文提出了一种基于三维电热模拟的方法来研究垂直功率MOSFET由于源端金属化老化而导致的失效。给出了获得MOSFET三维有限元模型的建模步骤，以及MOSFET电学行为的智能近似和限制。为了优化功率器件的设计，研究了键合线规和顶层金属化接触面积对器件性能的影响。对电力装置的热失控现象和热点的形成进行了模拟和讨论。(C)2011爱思唯尔有限公司。保留所有权利。
This paper presents a methodology, based on 3D electro-thermal simulation, to investigate failures of vertical power MOSFET due to metallization ageing of source terminal. Modelling steps to obtain a 3D finite element modelling of MOSFET are presented with the smart approximations and limitations of MOSFET electrical behaviour. The effects of bonding wire gauge and contact area with top metallization are studied to optimize the power device design. The power device thermal runaway phenomenon and hot spot formation has been simulated and discussed. (C) 2011 Elsevier Ltd. All rights reserved.