Optoelectronic studies of boron nitride nanotubes and hexagonal boron nitride crystals by photoconductivity and photoluminescence spectroscopy experiments
Optoelectronic studies of boron nitride nanotubes and hexagonal boron nitride crystals by photoconductivity and photoluminescence spectroscopy experiments
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DOI：
10.1002/pssb.201000360
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发表时间：
2010-12-01
影响因子：
1.6
通讯作者：
Loiseau, Annick
中科院分区：
文献类型：
--
作者：
Brasse, Gurvan;Maine, Sylvain;Loiseau, Annick
通过光电导实验和光致发光激发分析研究了六方氮化硼和氮化硼纳米管的光电性质。通过这种方法，与六方氮化硼的导带相关的激发已被实验确定，以及自由激子能级。多壁氮化硼纳米管也已导致通过使用这些方法和第一个结果提出了一些假设的带隙能量和性质的各种exception，这发生在UV激发下。这些实验结果进行了介绍和讨论，并提出了一些观点。(C)2010 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆
The optoelectronic properties of hexagonal boron-nitride and boron-nitride nanotubes (BNNTs) are investigated by using photoconductivity experiments, associated to photoluminescence excitation analysis. By this way, excitations related to the conduction band of hexagonal boron-nitride have been experimentally determined, as well as the free excitonic level. Multiwalled boron-nitride nanotubes have also been lead by using these methods and the first results suggest some hypotheses about the band gap energy and the nature of the various absorptions, which occur under an UV excitation. These experimental results are presented and discussed and some perspectives are finally suggested. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim