A generalized plane-wave formulation of k · p formalism and continuum-elasticity approach to elastic and electronic properties of semiconductor nanostructures
A generalized plane-wave formulation of k · p formalism and continuum-elasticity approach to elastic and electronic properties of semiconductor nanostructures
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k·p 形式的广义平面波公式和半导体纳米结构弹性和电子特性的连续弹性方法
DOI:
10.1016/j.commatsci.2014.06.047
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发表时间:
2014
影响因子:
3.3
通讯作者:
E. O’Reilly
中科院分区:
文献类型:
--
作者:
O. Marquardt;S. Boeck;C. Freysoldt;T. Hickel;S. Schulz;J. Neugebauer;E. O’Reilly
We present a generalized and flexible plane-wave based implementation of the multiband k· p formalism to study the electronic properties of semiconductor nanostructures. All ingredients of the modeling process, namely the Hamiltonian, the nanostructure’s geometry and the required material parameters, are defined in human-readable input files that can be easily generated and modified. The generalized k· p model can contain an arbitrary number of directly treated bands as well as strain, piezoelectric, and external potentials. All calculations can be performed for arbitrary crystal structures. The nanostructure is described in terms of a real-space composition map that may contain an arbitrary number of base compounds and alloys. We demonstrate the applicability and flexibility of our implementation for the example of (111)-oriented, site-controlled InGaAs quantum dots, where a rotated eight-band k· p Hamiltonian is employed. As a second example, a 14-band k· p model that captures the bulk inversion asymmetry of the zinc-blende lattice is applied for the case of a pyramidal (0 0 1)-oriented InAs/GaAs quantum dot. Here we show that the explicit treatment of 14 bands removes the well known shortcoming of eight-band k· p models for (0 0 1)-oriented zinc-blende quantum dots which leads to artificially degenerate p-like electron states.