Characterization of band bendings on Ga-face and N-face GaN films grown by metalorganic chemical-vapor deposition
Characterization of band bendings on Ga-face and N-face GaN films grown by metalorganic chemical-vapor deposition
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DOI：
10.1063/1.1481782
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发表时间：
2002-05
影响因子：
4
通讯作者：
Ho Won Jang;Jung-Hee Lee;Jong‐Lam Lee
中科院分区：
文献类型：
--
作者：
Ho Won Jang;Jung-Hee Lee;Jong‐Lam Lee
The change of band banding with the crystal polarity of GaN films was investigated using high-resolution photoemission spectroscopy. Compared with a N-face sample, the Ga-face sample exhibited higher Schottky barrier height and lower contact resistivity of a Ti/Al-based Ohmic contact. It was found that Ga-face GaN has a larger surface band bending than N-face GaN by 1.4 eV due to spontaneous polarization, resulting in higher Schottky barrier height. The lower Ohmic contact resistivity on Ga-face GaN originated from the formation of polarization-induced two-dimensional electron gas at the interface of AlN with GaN.
