An improved GaAs MESFET model for SPICE
An improved GaAs MESFET model for SPICE
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DOI：
10.1109/22.130988
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发表时间：
1990-06
影响因子：
4.3
通讯作者：
A. McCamant;G. McCormack;David Horton Smith
中科院分区：
文献类型：
--
作者：
A. McCamant;G. McCormack;David Horton Smith
本文讨论了一种能更精确地模拟GaAsMESFET器件的SPICE模型。特别是，小信号参数在广泛的偏置条件下精确建模。这些结果是通过修正H. Statz等人（参见IEEE Trans. Electron. Devices，vol.3，no.2，p.160-9，1987），以更好地表示作为所施加电压的函数的I/sub ds/的变化。该模型适用于夹断电压的大范围内，允许尺寸缩放的设备，并适合于建模R/子ds/随频率的变化。Statz方程用于表示模型的二极管特性和电容分量。>
A SPICE model for modeling GaAs MESFET devices more accurately is discussed. In particular, small-signal parameters are accurately modeled over a wide range of bias conditions. These results were achieved by modifying the model equations of H. Statz et al. (see IEEE Trans. Electron. Devices, vol.3, no.2, p.160-9, 1987) to better represent the variation of I/sub ds/ as a function of the applied voltage. The model applies over a large range of pinch-off voltages, allows size scaling of devices, and is suited for modeling R/sub ds/ changes with frequency. The Statz equations are used to represent diode characteristics and capacitive components of the model. >