THEORY OF THE LINEWIDTH OF SEMICONDUCTOR-LASERS
THEORY OF THE LINEWIDTH OF SEMICONDUCTOR-LASERS
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DOI：
10.1109/jqe.1982.1071522
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发表时间：
1982-01-01
影响因子：
2.5
通讯作者：
HENRY, CH
中科院分区：
文献类型：
--
作者：
HENRY, CH
提出了单模半导体激光器光谱宽度的理论，并用于解释Fleming和Mooradian最近对AlGaAs激光器的测量。他们发现线宽与功率成反比，并且在每个面1 mW时具有114 MHz的值。这个值比现有理论所能解释的要大30倍。线宽的增加是由于实际折射率随载流子密度的变化。自发发射引起激光场的相位和强度变化。激光恢复到稳态强度会导致折射率虚部的变化。这些变化伴随着折射率实部的变化，引起额外的相位波动和谱线展宽。线宽增强显示为，其中。解释观察到的线宽所需的值接近于A的4.6和6.2的实验值。
A theory of the spectral width of a single-mode semiconductor laser is presented and used to explain the recent measurements of Fleming and Mooradian on AlGaAs lasers. They found the linewidth to be inversely proportional to power and to have a value of 114 MHz at 1 mW per facet. This value is 30 times greater than can be explained by existing theories. The enhanced linewidth is attributed to the variation of the real refractive indexwith carrier density. Spontaneous emission induces phase and intensity changes in the laser field. The restoration of the laser to its steady-state intensity results in changes in the imaginary part of the refractive index. These changes are accompanied by changes in the real part of the refractive index, which cause additional phase fluctuations and line broadening. The linewidth enhancement is shown to be, where. A value of, needed to explain the observed linewidth, is close to the experimental values of a of 4.6 and 6.2.