Preparation of lanthanum strontium cobalt oxide electrode on a Si wafer for stress engineering of ferroelectric thin films
Preparation of lanthanum strontium cobalt oxide electrode on a Si wafer for stress engineering of ferroelectric thin films
复制标题
用于铁电薄膜应力工程的硅片上镧锶钴氧化物电极的制备
DOI：
10.2109/jcersj2.122.63
复制
发表时间：
2014
影响因子：
1.1
通讯作者：
T. Matsuda
中科院分区：
文献类型：
--
作者：
T. Ohno;H. Yanagida;Hisao Suzuki;T. Matsuda
对镧锶钴氧化物（LSCO）的前驱体溶液进行了改性，以增加单层薄膜的厚度。结果表明，在硅片上沉积了 170 nm 厚的 LSCO，用于铁电薄膜的应力工程。 LSCO层的单层膜厚度随着LSCO前体溶液粘度的增加而增加。此外，使用改性LSCO前体溶液的具有氧化镍镧（LNO）晶种层的LSCO的结晶度和电阻率几乎与报道的LSCO前体溶液相同。 LSCO(170nm)/LNO(160nm)/Si叠层结构上Zr/Ti=53/47组成的锆钛酸铅薄膜的残余应力为10.9GPa压应力，增强了铁电性能(2Pr=120̄C/cm2)。 ©2014 日本陶瓷学会。版权所有。
The precursor solution for lanthanum strontium cobalt oxide (LSCO) was modified to increase the single-layer film thickness. Results show that LSCO with 170 nm thickness was deposited on a Si wafer for stress engineering of a ferroelectric thin film. The single-layer film thickness for LSCO layer increased concomitantly with increasing viscosity in LSCO precursor solution. In addition, the crystallinity and the electrical resistivity of a LSCO with lanthanum nickel oxide (LNO) seeding layers using the modified LSCO precursor solution was nearly equal to that of the reported LSCO precursor solution. The residual stress in lead zirconate titanate with Zr/Ti = 53/47 composition thin film on a LSCO(170nm)/LNO(160 nm)/Si stacking structure was 10.9GPa compressive stress, which enhances the ferroelectric property (2Pr = 120 ̄C/cm2). ©2014 The Ceramic Society of Japan. All rights reserved.
DOI：
10.1088/1468-6996/12/3/034413
发表时间：
2011-06-01
影响因子：
5.5
作者：
Kiguchi, Takanori;Aoyagi, Kenta;Konno, Toyohiko J.
通讯作者：
Konno, Toyohiko J.