Strain distributions and diffraction peak profiles from crystals with dislocations.
Strain distributions and diffraction peak profiles from crystals with dislocations.
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位错晶体的应变分布和衍射峰轮廓
DOI：
10.1107/s2053273314011139
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
K. K. Sabelfeld
中科院分区：
文献类型：
--
作者：
V. M. Kaganer;K. K. Sabelfeld
用蒙特卡罗方法直接计算了不同位错排列模式的衍射分布，并与相同排列模式下的应变分布进行了比较，结果符合Stokes-Wilson近似。结果表明，只要不存在长程序，应变分布和衍射曲线就非常吻合。给出了不相关缺陷应变分布的解析计算方法。对于直位错，Stokes-Wilson和Krivoglaz-Wilkens近似给出了相同的衍射轮廓，中心部分为高斯，尾部为∝q−3幂律。
Diffraction profiles for different models of dislocation arrangements are calculated directly by the Monte Carlo method and compared with the strain distributions for the same arrangements, which corresponds to the Stokes–Wilson approximation. It is shown that the strain distributions and the diffraction profiles are in close agreement as long as long-range order is absent. Analytical calculation of the strain distribution for uncorrelated defects is presented. For straight dislocations, the Stokes–Wilson and the Krivoglaz–Wilkens approximations give the same diffraction profiles, with the Gaussian central part and ∝ q−3 power law at the tails.