Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing
Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing
复制标题
生长后退火过程中通过质量传输实现低温外延 Ge1-xSnx/Ge/Si(100) 合金的扁平化
DOI：
10.1016/j.apsusc.2010.12.094
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发表时间：
2011-02
影响因子：
6.7
通讯作者：
Wang, Qiming
中科院分区：
文献类型：
--
作者：
Wang, Wei;Su, Shaojian;Zheng, Jun;Zhang, Guangze;Xue, Chunlai;Zuo, Yuhua;Cheng, Buwen;Wang, Qiming
通过MBE在Si（100）上生长外延Ge 1-xSnx合金，并添加Ge缓冲层。以GeH 4为气源，采用两步法生长Ge缓冲层。用卢瑟福背散射光谱（RBS）、双晶X射线衍射（DCXRD）和原子力显微镜（AFM）对外延层进行了表征。然后将Ge 1 − xSnx合金在500°C下退火0至10分钟。在退火过程中，观察到表面形态的演变，从三维圆形土丘到近二维波纹，最后到平坦。这一结果可归因于通过表面扩散的质量传输。
Epitaxial Ge1−xSnxalloys were grown on Si(100) by MBE with a Ge buffer layer. The Ge buffer was grown by two step method using GeH4as gas source. The epitaxial layers were characterized by Rutherford Backscattering Spectrometry (RBS), Double Crystal X-ray Diffraction (DCXRD), and Atomic Force Microscopy (AFM) measurements. Then the Ge1−xSnxalloys were annealed at 500°C for times ranging from 0 to 10min. During the annealing process, the surface morphology evolution, from three-dimensional round mounds to nearly two-dimensional ripples, and finally to flat, was observed. This result can be attributed to mass transport by surface diffusion.
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影响因子：
8.6
作者：
Golzhauser, A;Ehrlich, G
通讯作者：
Ehrlich, G
影响因子：
3.7
作者：
L. Pedemonte;G. Bracco;C. Boragno;F. Mongeot;U. Valbusa
通讯作者：
L. Pedemonte;G. Bracco;C. Boragno;F. Mongeot;U. Valbusa
影响因子：
3.7
作者：
Navot Israeli Daniel Kandel
通讯作者：
Navot Israeli Daniel Kandel
DOI：
10.1103/physrevb.42.5013
发表时间：
1990-09
期刊：
Physical review. B, Condensed matter
影响因子：
--
作者：
Ozdemir;Zangwill
通讯作者：
Ozdemir;Zangwill
影响因子：
8.6
作者：
Wang;Ehrlich
通讯作者：
Wang;Ehrlich