Trends in heteroepitaxy of III-Vs on silicon for photonic and photovoltaic applications
Trends in heteroepitaxy of III-Vs on silicon for photonic and photovoltaic applications
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用于光子和光伏应用的硅上 III-V 族异质外延的趋势
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
F. Olsson
中科院分区：
文献类型：
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作者：
S. Lourdudoss;C. Junesand;H. Kataria;W. Metaferia;G. Omanakuttan;Yanting Sun;Zhechao Wang;F. Olsson
我们提出并比较了现有的异质外延的III-V族硅和他们的发展趋势的方法。我们专注于外延横向过生长（PLIG）方法作为一种手段，实现良好的质量III-V硅。最初主要通过液相外延和氢化物气相外延等近平衡外延方法进行，现在甚至通过金属有机物气相外延等非平衡方法进行。在BLOG方法中，在横向生长的较纯的III-V族层和硅之间仍然存在中间缺陷种子层和掩模层。在被称为波纹外延横向过生长（CENTRAL）方法的改进的BLOG方法中，可以获得III-V层和硅之间的直接界面。在本报告中，我们将介绍这些技术获得的一些最近的结果。我们评估的潜力，这些方法沿着与其他现有的方法实现真正的单片光子集成硅和III-V/Si异质结太阳能电池。
We present and compare the existing methods of heteroepitaxy of III-Vs on silicon and their trends. We focus on the epitaxial lateral overgrowth (ELOG) method as a means of achieving good quality III-Vs on silicon. Initially conducted primarily by near-equilibrium epitaxial methods such as liquid phase epitaxy and hydride vapour phase epitaxy, nowadays ELOG is being carried out even by non-equilibrium methods such as metal organic vapour phase epitaxy. In the ELOG method, the intermediate defective seed and the mask layers still exist between the laterally grown purer III-V layer and silicon. In a modified ELOG method called corrugated epitaxial lateral overgrowth (CELOG) method, it is possible to obtain direct interface between the III-V layer and silicon. In this presentation we exemplify some recent results obtained by these techniques. We assess the potentials of these methods along with the other existing methods for realizing truly monolithic photonic integration on silicon and III-V/Si heterojunction solar cells.