Non‐stoichiometry related defects at the melt growth of semiconductor compound crystals – a review
Non‐stoichiometry related defects at the melt growth of semiconductor compound crystals – a review
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DOI：
10.1002/crat.200310069
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发表时间：
2003-07
影响因子：
1.5
通讯作者：
P. Rudolph
中科院分区：
文献类型：
--
作者：
P. Rudolph
概述了 IV-VI (PbTe)、II-VI (CdTe) 和 III-V (GaAs、InP) 半导体化合物晶体中依赖于熔体非化学计量生长条件的缺陷知识。处理从当今有关相位关系的信息开始，即存在区域的形状与化学计量的关系。指定了与非化学计量相关的熔体生长现象。之后，讨论了选定的本征点缺陷及其对杂质掺入的影响（作为化学计量偏差的函数）。触及了原生点缺陷和位错形成之间的相互作用过程。最后，显示了沉淀和夹杂物并入的严重机制。提到了缺陷最小化的可能措施。
An overview on the defect knowledge in IV‐VI (PbTe), II‐VI (CdTe) and III‐V (GaAs, InP) semiconductor compound crystals in dependence on non‐stoichiometric growth conditions from the melt is given. The treatment starts with the today's informations about the phase relations, i.e. the shape of the existence regions versus stoichiometry. Non‐stoichiometry related melt growth phenomena are specified. After that selected intrinsic point defects and their influence on the impurity incorporation as function of deviation from stoichiometry are discussed. The interaction processes between native point defects and dislocation formation is touched. Finally, the serious mechanisms of precipitation and inclusion incorporation are shown. Possible measures of defect minimization are mentioned.