In situ verification of single-domain III-V on Si(100) growth via metal-organic vapor phase epitaxy
In situ verification of single-domain III-V on Si(100) growth via metal-organic vapor phase epitaxy
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通过金属有机气相外延原位验证 Si(100) 生长上的单畴 III-V
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
W. Stolz
中科院分区：
文献类型：
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作者：
H. Döscher;T. Hannappel;B. Kunert;A. Beyer;K. Volz;W. Stolz
利用反射各向异性谱(RAS)对金属-有机气相外延(MOVPE)生长在Si(100)衬底上的GaP薄膜的反相区进行了原位定量研究。通过对单畴GaP/Si(100)表面的RAS峰强度的分析，结合同质外延生长的GaP(100)的富P表面重构，确定了单畴GaP/Si(100)表面的制备方法。用原子力显微镜对前处理的Si(100)衬底和MOVPE生长的GaP/Si(100)薄膜进行了非原位表征，以确定单原子和双原子表面台阶的形成，并分析了磁畴的分布。
Reflectance anisotropy spectroscopy (RAS) was used in situ for the quantification of antiphase domains on surfaces of thin GaP films deposited onto Si(100) by metal-organic vapor phase epitaxy (MOVPE). The preparation of a single-domain GaP∕Si(100) surface was determined via the analysis of RAS peak intensities in reference to the well-known P-rich surface reconstruction of homoepitaxially grown GaP(100). Both preprocessed Si(100) substrates and MOVPE as-grown GaP∕Si(100) films were also characterized ex situ by atomic force microscopy to identify the formation of mono- and diatomic surface steps and to analyze of the domain distribution, respectively.