A GaAs Nanowire Array Solar Cell With 15.3% Efficiency at 1 Sun
A GaAs Nanowire Array Solar Cell With 15.3% Efficiency at 1 Sun
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DOI：
10.1109/jphotov.2015.2484967
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发表时间：
2016-01-01
影响因子：
3
通讯作者：
Samuelson, Lars
中科院分区：
文献类型：
--
作者：
Aberg, Ingvar;Vescovi, Giuliano;Samuelson, Lars
制备了一种在1太阳强度下，在AM1.5g光照下，独立验证太阳能转换效率为15.3%，开路电压为0.906 V的砷化镓纳米线阵列太阳能电池。这是已发表的纳米线阵列太阳能电池的最高效率，是砷化镓纳米线阵列太阳能电池先前记录的两倍。这种太阳能电池是通过基于衬底的外延制造的，但在结构上与无衬底的气氧化制造兼容，为大批量生产提供了途径。当轴向p-n结GaAs芯覆盖13%的表面积时，产生的短路电流为21.3 mA/cm(2)，这相当于一个370 nm厚的平面层。
A GaAs nanowire array solar cell with an independently verified solar energy conversion efficiency of 15.3% and open-circuit voltage of 0.906 V under AM1.5g solar illumination at 1-sun intensity has been fabricated. This is the highest published efficiency for nanowire array solar cells and is twice the prior record for GaAs nanowire array solar cells. The solar cell has been fabricated by substrate-based epitaxy but is structurally compatible with substrate-less aerotaxy fabrication, providing a path to high-volume manufacturing. The short-circuit current of 21.3 mA/cm(2) was generated with axial p-n junction GaAs cores covering 13% of the surface area, which is a volume of GaAs equivalent to a 370-nm-thick planar layer.