Positron Annihilation in Proton Irradiated Czochralski-Grown Si
Positron Annihilation in Proton Irradiated Czochralski-Grown Si
复制标题
质子辐照直拉生长硅中的正电子湮灭
DOI：
10.1143/jjap.33.1
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发表时间：
1994
影响因子：
1.5
通讯作者：
Shoichiro Tanigawa Ikari
中科院分区：
文献类型：
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作者：
A. Uedono;Y. Cho;Shoichiro Tanigawa Ikari
用正电子湮没技术研究了65 MeV质子辐照直拉单晶硅产生的缺陷。测量了湮没辐射和正电子寿命谱随等时退火温度变化的多普勒展宽轮廓。发现由辐照引入的双空位在200° C以上迁移，并且它们形成稳定的空位-氧复合物，例如V3 On（n=1-3）。这些缺陷在1500 ° C退火消失。在空位-氧复合物恢复后，发现氧簇是主要的缺陷。氧簇的聚集开始于800° C以上。
Defects introduced by 65 MeV proton irradiation into Czochralski-grown Si were investigated by the positron annihilation technique. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured as a function of isochronal annealing temperature. Divacancies introduced by the irradiation were found to migrate above 200° C and they formed stable vacancy-oxygen complexes such as V3On (n=1–3). These defects annealed out at ∼500° C. After the recovery of vacancy-oxygen complexes, oxygen clusters were found to be the predominant defect. The aggregation of the oxygen clusters started above 800° C.