Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance
Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance
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DOI：
10.1002/adma.201002946
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发表时间：
2011-02-15
影响因子：
29.4
通讯作者：
Chin, Albert
中科院分区：
文献类型：
--
作者：
Cheng, Chun-Hu;Yeh, Fon-Shan;Chin, Albert
采用共价键合的介质GeO（x）和金属氮氧化物HfON以及低成本的电极制造了非常高性能的Ni/GeO（x）/HfON/TaN非易失性电阻存储器。该器件具有较低的置位和复位功率、良好的85 ℃保持能力和10（5）的耐久性，接近现有商用闪存的特性。
Very high performance Ni/GeO(x)/HfON/TaN non-volatile resistive memory is fabricated using the covalently bonded dielectric GeO(x) and metal oxynitride HfON, as well as low cost electrodes. The device shows low set and reset powers, good 85 degrees C retention, and 10(5) endurance, which are near to the characteristics of existing commercial flash memory.