Controlled p-doping of zinc phthalocyanine by coevaporation with tetrafluorotetracyanoquinodimethane:: A direct and inverse photoemission study
Controlled p-doping of zinc phthalocyanine by coevaporation with tetrafluorotetracyanoquinodimethane:: A direct and inverse photoemission study
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DOI：
10.1063/1.1424067
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发表时间：
2001-12-10
影响因子：
4
通讯作者：
Kahn, A
中科院分区：
文献类型：
--
作者：
Gao, WY;Kahn, A
采用紫外和x射线光发射光谱、逆光发射光谱以及原位电流-电压（I-V）测量研究了酞菁锌（ZnPc）与四氟四氰喹诺二甲烷（F-4-TCNQ）的p掺杂。在实验误差范围内，发现F-4-TCNQ的电子亲和力（5.24 eV）与ZnPc的电离能（5.28 eV）相等，符合有效的主掺杂电子转移。结果表明，掺杂ZnPc的费米能级从中隙附近下降到最高已占据分子轨道前缘以上的0.18 eV，并在与Au衬底的界面处形成窄空间电荷层（< 32）。原位I-V测量显示掺杂引起的空穴电流增加了7个数量级。(C) 2001年美国物理研究所。
P-doping of zinc phthalocyanine (ZnPc) with tetrafluorotetracyanoquinodimethane (F-4-TCNQ) is investigated with ultraviolet and x-ray photoemission spectroscopy, inverse photoemission spectroscopy, and in situ current-voltage (I-V) measurements. The electron affinity of F-4-TCNQ (5.24 eV) is found to be equal, within experimental error, to the ionization energy of ZnPc (5.28 eV), consistent with efficient host-to-dopant electron transfer. As a result, the Fermi level in doped ZnPc drops from near midgap to 0.18 eV above the leading edge of the highest occupied molecular orbital and a narrow space-charge layer (< 32 ) is formed at the interface with the Au substrate. In situ I-V measurements show a seven orders of magnitude doping-induced increase in hole current. (C) 2001 American Institute of Physics.