Ensemble Monte Carlo calculation of hole transport in bulk 3C-SiC
Ensemble Monte Carlo calculation of hole transport in bulk 3C-SiC
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DOI：
10.1063/1.369689
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发表时间：
1999-03-15
影响因子：
3.2
通讯作者：
Ruden, PP
中科院分区：
文献类型：
--
作者：
Bellotti, E;Nilsson, HE;Ruden, PP
本文首次介绍了 SiC 3C 相中空穴传输的计算。该模型的显着特征是通过经验赝势方法计算的全能带结构、数值计算的空穴声子散射率和碰撞电离跃迁率。确定散射率所需的耦合常数已根据文献中的可用数据或通过将计算的迁移率值与低场实验结果拟合来确定。碰撞电离转变率是根据基于波矢量相关介电函数的能带结构直接确定的。对于不同的场方向和掺杂浓度，计算作为所施加电场强度的函数的稳态漂移速度。计算结果表明，沿不同方向施加的场的漂移速度存在各向异性，类似于硅中的情况。 (100)和(111)场方向的速度最大值分别为1.63 x 10(7) cm s(-1)和1.43 x 10(7) cm s(-1)。高场输运也得到了研究。计算出的电离系数显示，沿不同方向施加的场没有明显的各向异性。第二价带对碰撞电离率贡献最大。进一步发现电离阈值相对较软。 (C) 1999 年美国物理研究所。
In this article the first calculation of hole transport in the 3C phase of SiC is presented. The salient features of the model are the full band-structure computed by the empirical pseudopotential method, a numerically calculated hole-phonon scattering rate and the impact ionization transition rates. The coupling constants necessary to determine the scattering rates have been determined either from available data in the literature or by fitting the calculated mobility values to low field experimental results. The impact ionization transition rates have been determined directly from the band-structure based on a wave-vector dependent dielectric function. The steady state drift velocity as a function of the applied electric field strength is computed for different field directions and doping concentrations. The calculated results show the presence of an anisotropy in the drift velocity for the field applied along different directions, similar to what is found in silicon. The maximum values of the velocity are 1.63 x 10(7) cm s(-1) and 1.43 x 10(7) cm s(-1) for the (100) and (111) field directions, respectively. High field transport has also been studied. The calculated ionization coefficients show no appreciable anisotropy for the field applied along different directions. The second valence band contributes the most to the impact ionization rate. It is further found that the ionization threshold is relatively soft. (C) 1999 American Institute of Physics.