Chemical vapour deposition of zirconium carbide and silicon carbide hybrid whiskers
Chemical vapour deposition of zirconium carbide and silicon carbide hybrid whiskers
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DOI：
10.1016/j.matlet.2009.12.002
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发表时间：
2010-02
影响因子：
3
通讯作者：
Qiaomu Liu;Litong Zhang;Lai-fei Cheng;Yiguang Wang
中科院分区：
文献类型：
--
作者：
Qiaomu Liu;Litong Zhang;Lai-fei Cheng;Yiguang Wang
以甲基三氯硅烷、氯化锆、甲烷和氢气为前驱体，采用化学气相共沉积法制备了碳化锆和碳化硅杂化晶须。用扫描电子显微镜、能谱和X射线衍射仪对碳化锆晶须和碳化硅晶须进行了表征。结果表明，在有甲烷的情况下，共沉积过程比在无甲烷的情况下更有效。在高温下，甲烷的存在可以加速共沉积过程和晶须中碳化锆相的生长。在碳、碳化锆、碳化硅沉积模型的基础上，提出了生长模型。
Zirconium carbide and silicon carbide hybrid whiskers were codeposited by chemical vapour deposition using methyl trichlorosilane, zirconium chloride, methane and hydrogen as the precursors. The zirconium carbide and silicon carbide whiskers were characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction. The results indicate that the codeposition process is more effective in the presence of methane than in the absence of methane. The codeposition process and the growth of zirconium carbide in the whiskers can be accelerated at high temperature in the presence of methane. A growth model was proposed based on the deposition model of carbon, zirconium carbide and silicon carbide.