Quantitative Analysis of the Role of Contacts in the Measurements of Integral Quantum Hall Effects
Quantitative Analysis of the Role of Contacts in the Measurements of Integral Quantum Hall Effects
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积分量子霍尔效应测量中接触作用的定量分析
DOI：
10.1143/jpsj.58.4086
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发表时间：
1989
影响因子：
1.7
通讯作者：
T. Fujii
中科院分区：
文献类型：
--
作者：
H. Hirai;S. Komiyama;S. Sasa;T. Fujii
研究了具有短交叉栅极的异质结构（GaAs/AlGaAs）霍尔棒器件在量子霍尔态下的特性。根据触点的特性，定量分析了纵向电阻异常和霍尔电阻与预期量子化值的偏差。观察到反场互易对称，以证明接触的对称性质。
Heterostructure (GaAs/AlGaAs) Hall-bar devices with a short cross gate are studied in a quantum Hall regime. Anomalous longitudinal resistances and deviations of the Hall resistance from an expected quantized value are quantitatively analyzed in terms of properties of contacts. Reverse-field reciprocity symmetry is observed to demonstrate symmetric properties of contacts.