A new Patterning method using photocatalytic lithography and selective atomic layer deposition
A new Patterning method using photocatalytic lithography and selective atomic layer deposition
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DOI：
10.1021/ja038769
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发表时间：
2004-01-14
影响因子：
15
通讯作者：
Sung, MM
中科院分区：
文献类型：
--
作者：
Lee, JP;Sung, MM
我们报道了一种新的图案化方法，利用烷基硅氧烷自组装单分子膜的光催化光刻和选择性原子层沉积薄膜。光催化光刻是基于在空气中紫外光照射下，与二氧化钛接触的烷基硅氧烷单分子膜的分解速度比与二氧化硅接触时的分解速度快得多的事实。用涂有图案化二氧化钛薄膜的石英板进行光催化光刻，在硅衬底上制备了烷基硅氧烷图案化单分子膜。采用原子层沉积的方法在单层图案化的硅衬底上选择性地沉积了一层氧化锆薄膜。
We report a new patterning method using photocatalytic lithography of alkylsiloxane self-assembled monolayers and selective atomic layer deposition of thin films. The photocatalytic lithography is based on the fact that the decomposition rate of the alkylsiloxane monolayers in contact with TiO2is much faster than that with SiO2under UV irradiation in air. The photocatalytic lithography, using a quartz plate coated with patterned TiO2thin films, was done to prepare patterned monolayers of the alkylsiloxane on Si substrates. A ZrO2thin film was selectively deposited onto the monolayer-patterned Si substrate by atomic layer deposition.