Piezoresistive effect in the three-dimensional diamondlike carbon nanostructure fabricated by focused-ion-beam chemical vapor deposition
Piezoresistive effect in the three-dimensional diamondlike carbon nanostructure fabricated by focused-ion-beam chemical vapor deposition
复制标题
DOI：
10.1116/1.3504584
复制
发表时间：
2010-12
期刊：
影响因子：
--
通讯作者：
R. Kometani;K. Yusa;S. Warisawa;S. Ishihara
中科院分区：
文献类型：
--
作者：
R. Kometani;K. Yusa;S. Warisawa;S. Ishihara
在这项研究中，电材料特性的三维（3D）类金刚石碳（DLC）结构制造的聚焦离子束化学气相沉积（FIB-CVD）进行了评估，以实现功能的三维纳米和微机械器件的压阻材料的基础上。然而，DLC悬臂梁结构制造的FIB-CVD没有表现出压阻性能，由于纳入镓（Ga），这是由Ga+ FIB照射注入。因此，研究了一种用于修改材料特性的方法，以在通过FIB-CVD制造的3D DLC结构中引入压阻特性。发现在低温（300 °C）下长时间退火（12 h或更长）是实现具有压阻特性的3D DLC结构的有效方法。在低温下长时间退火导致Ga从DLC中消除，而sp2/（sp2+sp3）比率没有任何变化。应变系数的值在2-34的范围内。3D纳米和微观结构.
In this study, the electrical material characteristics of a three-dimensional (3D) diamondlike carbon (DLC) structure fabricated by focused-ion-beam chemical vapor deposition (FIB-CVD) were evaluated to realize functional 3D nano- and micromechanical devices based on the piezoresistive material. However, the DLC cantilever structure fabricated by FIB-CVD did not exhibit piezoresistive properties due to the incorporated gallium (Ga), which was implanted by Ga+ FIB irradiation. Therefore, a method for the modification of material characteristics was examined to introduce piezoresistive properties in the 3D DLC structure fabricated by FIB-CVD. Long-time annealing (12 h or more) at a low temperature (300 °C) was found to be an effective method to realize a 3D DLC structure with piezoresistive properties. Long-time annealing at low temperatures caused Ga elimination from the DLC without any change in the sp2/(sp2+sp3) ratio. The values of the gauge factor were in the range of 2–34. 3D nano- and microstructures...