Development of Multi-User Multi-Chip SOI CMOS-MEMS Processes
Development of Multi-User Multi-Chip SOI CMOS-MEMS Processes
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DOI：
10.1109/memsys.2009.4805479
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发表时间：
2009-03
期刊：
影响因子：
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通讯作者：
K. Takahashi;M. Mita;M. Nakada;D. Yamane;A. Higo;H. Fujita;H. Toshiyoshi
中科院分区：
文献类型：
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作者：
K. Takahashi;M. Mita;M. Nakada;D. Yamane;A. Higo;H. Fujita;H. Toshiyoshi
本文提出了一种新的方法，集成多个MEMS设计与40 V级CMOS驱动电路在多用户多芯片的方式。在35 mm × 35 mm SOI芯片上完成了多芯片多用户CMOS-MEMS工艺。超过六种不同设计的SOI体微机械致动器，包括间距可调光栅单片集成到预制的高压电平移位器电路。我们测量了集成了高压电平转换器的光栅光阀的机电特性，并成功地实现了1 MHz的工作。
This paper presents a new method of integrating multiple MEMS designs with 40V class CMOS driver circuits in a multi-user-multi-chip manner. The multi-chip multi-user CMOS-MEMS process was done at 35 mm × 35 mm SOI chip. More than six different designs of SOI-bulk micromachined actuators including the pitch-tunable gratings were monolithically integrated onto the pre-fabricated high-voltage level-shifter circuits. We measured electro mechanical characteristics of the grating light valve integrated with high-voltage level-shifter and successfully demonstrated 1MHz operation.