Single dot spectroscopy of site-controlled InAs quantum dots nucleated on GaAs nanopyramids
Single dot spectroscopy of site-controlled InAs quantum dots nucleated on GaAs nanopyramids
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GaAs 纳米金字塔上成核的位点控制 InAs 量子点的单点光谱
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
D. Huffaker
中科院分区：
文献类型：
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作者：
T. Tran;A. Muller;C. Shih;P. Wong;G. Balakrishnan;N. Nuntawong;J. Tatebayashi;D. Huffaker
单砷化铟量子点，选择性地生长的图案化和再生长技术，探测使用高分辨率的低温microphotoluminescence光谱。对许多单个点的系统测量显示了均匀线宽的统计分布，峰值为120μeV，超过了未图案化的点，但与以前报道的图案化方法相比。线宽似乎不依赖于点生长的特定面，并且通常可以达到光谱仪分辨率极限（<100μeV）。这些测量表明，选址生长方法可以可控地定位具有良好光学质量的点，适用于受限结构，如微腔。
Single InAs quantum dots, site-selectively grown by a patterning and regrowth technique, were probed using high-resolution low-temperature microphotoluminescence spectroscopy. Systematic measurements on many individual dots show a statistical distribution of homogeneous linewidths with a peak value of ∼120μeV, exceeding that of unpatterned dots but comparing well with previously reported patterning approaches. The linewidths do not appear to depend upon the specific facet on which the dots grow and often can reach the spectrometer resolution limit (<100μeV). These measurements show that the site-selective growth approach can controllably position the dots with good optical quality, suitable for constrained structures such as microcavities.