On-chip high-Q spiral Cu inductors embedded in wafer-level chip-scale package for silicon RF application
On-chip high-Q spiral Cu inductors embedded in wafer-level chip-scale package for silicon RF application
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嵌入晶圆级芯片级封装的片上高 Q 螺旋铜电感器，适用于硅 RF 应用
DOI：
10.1109/mwsym.2004.1335843
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
T. Ito
中科院分区：
文献类型：
--
作者：
K. Itoi;M. Sato;H. Abe;H. Sugawara;H. Ito;K. Okada;K. Masu;T. Ito
在具有厚树脂层的硅衬底上制作了片上高Q值螺旋电感器。这些电感器是通过厚铜电镀重布线制造的，并通过厚树脂层与硅基板分隔超过 10 /spl mu/m。对于 3.5 匝矩形螺旋电感器，在 2 GHz 下获得的电感 L 分别为 5.2 和 4.9 nH，品质因数 Q 分别为 18.1 和 27.5（/spl rho/ 为 4-6、1k /spl Omega/cm）。该技术有利于硅射频应用，可最大限度地减少引线键合产生的杂散电感并降低电路电阻。
On-chip high-Q spiral inductors on Si substrate with thick resin layer have been fabricated. These inductors were fabricated by a thick Cu electroplated rerouting and separated more than 10 /spl mu/m from Si substrate by a thick resin layer. The inductance L of 5.2 and 4.9 nH with a quality factor Q of 18.1 and 27.5 were obtained for a 3.5 turn rectangle spiral inductor at 2 GHz in /spl rho/ of 4-6, 1k /spl Omega/cm, respectively. This technology is favorable for Si RF application to minimize the stray inductance from wire-bonding and reducing circuit resistance.