Radiation Resistance of High-Voltage Silicon and 4H-SiC Power p-i-n Diodes
Radiation Resistance of High-Voltage Silicon and 4H-SiC Power p-i-n Diodes
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DOI：
10.1109/ted.2020.3038713
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发表时间：
2021-01-01
影响因子：
3.1
通讯作者：
Mihaila, Andrei
中科院分区：
文献类型：
--
作者：
Hazdra, Pavel;Smrkovsky, Petr;Mihaila, Andrei
利用深能级瞬态谱（DLTS）、C-V剖面和开路电压衰减（MOCVD）测量，解释了中子辐照产生的位移损伤对4.5kV硅和4 H碳化硅（SiC）p-i-n功率二极管静态特性的不同影响。SiC中引入的缺陷数量更高，并且SiC中的载流子寿命和载流子去除的退化比硅中的载流子寿命和载流子去除进行得更快。然而，SiC二极管的n基极的较小尺寸和较高掺杂水平补偿了这些负面影响。结果，当二极管失去其导通状态载流子调制能力时，SiC p-i-n二极管在较高的注量下对中子辐照表现出显著更高的抵抗性。由于SiC的带隙较宽，辐照对漏电流的影响也可以忽略不计。可以假设在高中子辐射环境中SiC双极器件的可靠性优于硅。
The different effect of displacement damage produced by neutron irradiation on the static characteristics of 4.5-kV silicon and 4H silicon carbide (SiC) p-i-n power diodes is explained using deep level transient spectroscopy (DLTS), C-V profiling, and open-circuit voltage decay (OCVD) measurements. The number of introduced defects in SiC is higher, also the degradation of carrier lifetime and carrier removal proceeds more swiftly in SiC than those in silicon. However, smaller dimensions and a higher doping level of the n-base of the SiC diode compensate for these negative effects. As a result, the SiC p-i-n diode exhibits substantially higher resistance to neutron irradiation at higher fluences when the diode loses its ON-state carrier modulation capability. SiC also shows a negligible effect of irradiation on leakage current due to the wider bandgap. One may assume a better reliability of SiC bipolar devices over the silicon in a high neutron radiation environment.