Size-dependent modulation of carrier mobility in top-down fabricated silicon nanowires
Size-dependent modulation of carrier mobility in top-down fabricated silicon nanowires
复制标题
自上而下制造的硅纳米线中载流子迁移率的尺寸依赖性调制
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
J. Sleight
中科院分区：
文献类型：
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作者：
L. Sekaric;O. Gunawan;A. Majumdar;Xiao Hu Liu;D. Weinstein;J. Sleight
我们研究了自上而下制造的硅纳米线（NW）中场效应迁移率的尺寸依赖性。我们发现随着纳米线宽度的增加，电子迁移率增加，而空穴迁移率降低。观察到的趋势与我们基于面主导传输的预期相反。我们模拟电荷密度并研究栅极堆叠引起的应力的影响，以试图解释这些趋势。我们发现，对体硅或薄膜硅使用压阻系数并不能提供足够的迁移率变化来扭转面驱动的迁移率趋势。我们建议进一步研究一维西北角效应的贡献。
We have investigated the size dependence of field-effect mobility in top-down fabricated Si nanowires (NWs). We find that electron mobility increases while hole mobility decreases with the NW width. The observed trends are opposite of what we expect based on facet-dominated transport. We simulate charge densities and investigate the effect of gate stack-induced stress in an effort to explain these trends. We find that the use of piezoresistive coefficients for bulk or thin-film Si does not give sufficient change in mobility to reverse the facet-driven mobility trend. We suggest further investigation into the contribution of one-dimensional NW corner effects.