Industrialization of mmWave SiGe technologies: Status, future requirements and challenges

Industrialization of mmWave SiGe technologies: Status, future requirements and challenges
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毫米波 SiGe 技术的产业化:现状、未来要求和挑战

DOI:
10.1109/sirf.2013.6489447
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发表时间:
2013
期刊:
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
影响因子:
--
通讯作者:
R. Lachner
R. Lachner
中科院分区:
--
文献类型:
--
作者:
R. Lachner

文献摘要

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我们将概述英飞凌的硅锗毫米波技术。目前的生产工艺B7HF200将简要描述,并介绍欧洲研究项目DOTFIVE最近实现的性能增强。将给出成功的商用SiGe毫米波产品的例子。在76-81 GHz范围内的汽车雷达应用需求的驱动下,将概述未来工艺发展的方向和挑战。
An overview of Infineon's Silicon-Germanium millimeter wave technology will be given. The current production process B7HF200 will be briefly described and recent performance enhancements achieved in the European research project DOTFIVE presented. Examples of successful commercial SiGe mmwave products will be given. Driven by the requirements of automotive radar applications in the 76-81 GHz range, directions and challenges of future process developments will be outlined.