Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts
Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts
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DOI：
10.1088/0957-4484/21/10/105701
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发表时间：
2010-03
期刊：
影响因子：
3.5
通讯作者：
S. Habicht;Qing-Tai Zhao;S. Feste;Lars Knoll;Stefan Trellenkamp;B. Ghyselen;S. Mantl
中科院分区：
文献类型：
--
作者：
S. Habicht;Qing-Tai Zhao;S. Feste;Lars Knoll;Stefan Trellenkamp;B. Ghyselen;S. Mantl
We present electrical characterization of nickel monosilicide (NiSi) contacts formed on strained and unstrained silicon nanowires (NWs), which were fabricated by top-down processing of initially As + implanted and activated strained and unstrained silicon-on-insulator (SOI) substrates. The resistivity of doped Si NWs and the contact resistivity of the NiSi to Si NW contacts are studied as functions of the As + ion implantation dose and the cross-sectional area of the wires. Strained silicon NWs show lower resistivity for all doping concentrations due to their enhanced electron mobility compared to the unstrained case. An increase in resistivity with decreasing cross section of the NWs was observed for all implantation doses. This is ascribed to the occurrence of dopant deactivation. Comparing the silicidation of uniaxially tensile strained and unstrained Si NWs shows no difference in silicidation speed and in contact resistivity between NiSi/Si NW. Contact resistivities as low as 1.2 × 10 − 8 Ω cm − 2 were obtained for NiSi contacts to both strained and unstrained Si NWs. Compared to planar contacts, the NiSi/Si NW contact resistivity is two orders of magnitude lower.
