First- and second-order Raman scattering in nanocrystalline silicon
First- and second-order Raman scattering in nanocrystalline silicon
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DOI：
10.1103/physrevb.64.073304
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发表时间：
2001-08-15
影响因子：
3.7
通讯作者：
Jain, KP
中科院分区：
文献类型：
--
作者：
Mishra, P;Jain, KP
研究了纳米晶硅中一阶和二阶拉曼散射的限制效应。的平均尺寸的纳米晶体已被确定通过分析的一阶拉曼光谱使用的唯象声子约束模型。二阶声学带2LA和2 TA似乎不受限制效应的影响，并且与体中的那些相似。与体相比较，二阶光学带被加宽和移位。积分强度I（2 TO）（int）/I（TO）（int）的比率取决于晶体尺寸，并且在结晶极限和非晶极限之间变化。
Confinement effects on first-order and second-order Raman scattering in nanocrystalline silicon are presented. The average dimension of the nanocrystals has been determined by an analysis of the first-order Raman spectra using the phenomenological phonon confinement model. The second-order acoustic bands 2LA and 2TA do not seem to be influenced by confinement effects and are similar to those in the bulk. The second-order optic bands are broadened and shifted in comparison to those in the bulk. The ratio of the integrated intensities I(2TO)(int)/I(TO)(int) depends upon the nanocrystal size and varies between the crystalline and amorphous limits.