Deterministic Electrical Charge-State Initialization of Single Nitrogen-Vacancy Center in Diamond
Deterministic Electrical Charge-State Initialization of Single Nitrogen-Vacancy Center in Diamond
复制标题
DOI：
10.1103/physrevx.4.011057
复制
发表时间：
2014-03-31
影响因子：
12.5
通讯作者：
Mizuochi, N.
中科院分区：
文献类型：
--
作者：
Doi, Y.;Makino, T.;Mizuochi, N.
除了在经典信息处理设备中的应用外，室温下固体中原子缺陷的电控制将对基于此类缺陷的量子设备产生巨大影响。在这项研究中，我们证明了电气操纵的个别突出代表这样的原子固态缺陷，即，负电荷状态的单氮空位缺陷中心（NV-）在金刚石。我们的实验表明，确定性，纯粹的电荷状态初始化的个别NV中心。NV中心被放置在p-i-n二极管结构的本征区域中，其促进电荷载流子到缺陷的递送以用于电荷状态切换。一个单一的NV中心的电荷状态动力学进行了研究，通过时间分辨测量和非破坏性的单次拍摄读出的电荷状态。实现了大于0.72 +/- 0.10 μ s（-1）的快速电荷状态切换速率（从负电荷缺陷到中性电荷缺陷）。此外，在非操作模式下，实现的电荷状态稳定的时间大概远大于0.45 s。我们相信，所获得的结果不仅适用于量子位的超快电控制、长T-2量子存储器和与单NV中心相关的量子传感器，而且适用于基于在环境条件下工作的单原子存储位的经典存储器件。
Apart from applications in classical information-processing devices, the electrical control of atomic defects in solids at room temperature will have a tremendous impact on quantum devices that are based on such defects. In this study, we demonstrate the electrical manipulation of individual prominent representatives of such atomic solid-state defects, namely, the negative charge state of single nitrogen-vacancy defect centers (NV-) in diamond. We experimentally demonstrate, deterministic, purely electrical charge-state initialization of individual NV centers. The NV centers are placed in the intrinsic region of a p-i-n diode structure that facilitates the delivery of charge carriers to the defect for charge-state switching. The charge-state dynamics of a single NV center were investigated by time-resolved measurements and a nondestructive single-shot readout of the charge state. Fast charge-state switching rates (from negative to neutrally charged defects), which are greater than 0.72 +/- 0.10 mu s(-1), were realized. Furthermore, in no-operation mode, the realized charge states were stable for presumably much more than 0.45 s. We believe that the results obtained are useful not only for ultrafast electrical control of qubits, long T-2 quantum memory, and quantum sensors associated with single NV centers but also for classical memory devices based on single atomic storage bits working under ambient conditions.