Raman microspectroscopy of nanocrystalline and amorphous phases in hardness indentations

Raman microspectroscopy of nanocrystalline and amorphous phases in hardness indentations
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DOI:
10.1002/(sici)1097-4555(199910)30:10
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发表时间:
1999-10
影响因子:
2.5
通讯作者:
A. Kailer;K. Nickel;Y. Gogotsi
A. Kailer;K. Nickel;Y. Gogotsi
中科院分区:
化学3区
文献类型:
--
作者:
A. Kailer;K. Nickel;Y. Gogotsi

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在硬度压痕过程中,材料受到高度局部化的应力。这些应力不仅导致裂纹形成和位错滑移的塑性变形,而且在最大接触应力区域中可能发生晶体结构的完全改变和非晶相或高压多晶型物的形成。这种接触诱导相变在硬脆材料中观察到,包括半导体(Si,Ge,GaAs和InSb)和常见的陶瓷材料,如SiC和SiO2(α-石英和石英玻璃)。他们研究的主要工具是硬度压痕的拉曼显微光谱。在Si和Ge中,在硬度压痕时存在向金属高压相的初始转变,并且随后根据硬度测试的条件(特别是卸载速率)形成结晶、纳米晶或非晶相。一个相变也发生在锑化铟,而GaAs的结果没有给出足够的证据相变。压痕诱导的非晶化已被观察到在SiC和石英。即使是金刚石也被证明在压痕试验施加的非静水应力条件下会发生非晶化和相变。版权所有© 1999年约翰威利父子有限公司。
During hardness indentation, materials are subjected to highly l highly localized stresses. These stresses not only cause crack formation and plastic deformation by dislocation gliding, but a complete change of the crystal structure and formation of amorphous phases or high-pressure polymorphs can occur in the zone of maximum contact stresses. Such contact-induced phase transformations were observed in hard and brittle materials including semiconductors (Si, Ge, GaAs and InSb) and common ceramic materials such as SiC and SiO2 (α-quartz and silica glass). A prime tool for their investigation is the Raman microspectroscopy of hardness indentations. In Si and Ge, there is an initial transformation to metallic high-pressure phases upon hardness indentation and a subsequent formation of crystalline, nanocrystalline, or amorphous phases depending on the conditions of the hardness test, in particular the unloading rate. A phase transformation occurs also in InSb, whereas the results for GaAs do not give sufficient evidence for phase transformations. Indentation-induced amorphization has been observed in SiC and quartz. Even diamond has been shown to undergo amorphization and phase transformation under nonhydrostatic stress conditions imposed by indentation tests. Copyright © 1999 John Wiley & Sons, Ltd.