Effect of Si-Ion Irradiation on Microwave Surface Resistance in YBa2Cu3Oy Thin Films in Magnetic Fields
Effect of Si-Ion Irradiation on Microwave Surface Resistance in YBa2Cu3Oy Thin Films in Magnetic Fields
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DOI：
10.1109/tasc.2018.2808441
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发表时间：
2018-06
影响因子：
1.8
通讯作者：
S. Ohshima;N. Takanashi;A. Saito;K. Nakajima;T. Nagayama
中科院分区：
文献类型：
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作者：
S. Ohshima;N. Takanashi;A. Saito;K. Nakajima;T. Nagayama
在这项研究中，我们研究了硅离子辐照对YBCO薄膜的Rs的影响。我们测量了YBCO薄膜在垂直和平行于薄膜平面的磁场中的Rs 90和Rs 0。Si离子辐照条件如下配置：辐照能量= 50-500 keV，辐照离子密度= 1-8 × 1012 ion/cm 2。我们发现，通过离子辐照，Rs 90降低，并且在高磁场下，辐照能量为200 keV、辐照离子密度为4 × 1012 ion/cm 2的Si离子辐照是降低Rs 90的最有效构型。磁场依赖的Rs 0是相当小的所有YBCO薄膜与离子辐照。当外加磁场平行于薄膜平面时，YBCO的阻挡层起到强钉扎的作用，因此，磁场中的Rs 0很小，而不引入人工钉扎。但是，经Si离子辐照的YBCO薄膜的Rs 0比未辐照的YBCO薄膜的Rs 0要小，其中离子能量为200 keV，辐照密度为1 × 1012 ion/cm 2的条件对Rs 0的降低最大。
In this study, we examined the effect of Si-ion irradiation on Rs of YBCO thin films. We measured Rs 90 and Rs0 of YBCO thin films in a magnetic field applied both normal and parallel to the film plane. Si-ion irradiation conditions were configured as follows: irradiation energy = 50–500 keV, irradiation ion density = 1–8 × 10 12 ion/ cm2. We found that the Rs90 decreased through ion irradiation, and Si-ion irradiation with an irradiation energy of 200 keV and an irradiated ion density of 4 × 1012 ion/cm2 being the most effective configuration for reducing Rs90 in high magnetic fields. Magnetic field-dependent Rs0 was quite small for all YBCO films with and without ion irradiation. When a magnetic field is applied parallel to the film plane, the blocking layers of the YBCO act as strong pins, therefore, R s0 in the magnetic field is small without introduction of artificial pins. However, we found that the Rs0 of YBCO films became small with Si-ion irradiation than that of the YBCO film without Si-ion irradiation, that the condition of ion energy 200 keV and ion irradiation density 1 × 10 12 ion/cm2 could reduce Rs0 most.