Characterization of Organofunctional Silane Films on Zinc Substrates
Characterization of Organofunctional Silane Films on Zinc Substrates
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DOI：
10.1006/jcis.1996.4604
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发表时间：
1997
影响因子：
9.9
通讯作者：
Yuan;van Ooij WJ
中科院分区：
文献类型：
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作者：
Yuan;van Ooij WJ
采用椭圆偏振仪、接触角测量、反射吸收红外光谱（RAIR）、X射线光电子能谱（XPS）和原子力显微镜（AFM）等方法对水溶液中在纯锌基体上形成的有机硅烷薄膜进行了表征。所研究的硅烷是γ-氨丙基三乙氧基硅烷（γ-APS）和γ-脲基丙基三烷氧基硅烷（γ-UPS）。沉积参数包括溶液浓度、溶液浸渍时间和施加溶液的pH值。这些沉积变量上的膜的厚度，膜的表面能，膜的化学结构，和膜的表面形貌的影响进行了讨论。研究了老化时间对硅烷涂层纯锌表面能的影响。结果发现，所获得的硅烷膜厚度主要取决于所施加的溶液浓度，并且与溶液浸渍时间无关。所施加的硅烷膜的分子取向由所施加的硅烷溶液的pH值和金属基底的等电点决定。锌基材的pH值的沉积窗口在6和9之间。硅烷涂层的纯锌基板的总表面能急剧下降与膜老化时间的γ-APS，但不是γ-UPS。在空气中老化后，两种硅烷膜的稳定性都有所提高。
Organofunctional silane films formed on pure zinc substrates from aqueous solutions were characterized by ellipsometry, contact angle measurements, reflection absorption infrared spectroscopy (RAIR), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The silanes studied were gamma-aminopropyltriethoxysilane (gamma-APS) and gamma-ureidopropyltrialkoxysilane (gamma-UPS). The deposition parameters included solution concentration, solution dipping time, and pH value of the applied solution. Effects of these deposition variables on the thickness of the film, the surface energy of the film, the chemical structure of the film, and the surface topography of the film are discussed. The effect of film aging time on the surface energy of silane-coated pure zinc substrates was also studied. It was found that the silane film thickness obtained depends primarily on the applied solution concentration and is independent of the solution dipping time. The molecular orientations of the applied silane film are determined by the pH value of the applied silane solution and the isoelectric point of the metal substrates. The deposition window in terms of pH value for zinc substrates was between 6 and 9. The total surface energy of silane-coated pure zinc substrate decreases steeply with film aging time for gamma-APS but not for gamma-UPS. The stability of both silane films improved after aging in the air.