Manipulating the energy levels of semiconductor quantum dots
Manipulating the energy levels of semiconductor quantum dots
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DOI：
10.1103/physrevb.59.15368
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发表时间：
1999-06-15
影响因子：
3.7
通讯作者：
Piva, PG
中科院分区：
文献类型：
--
作者：
Fafard, S;Wasilewski, ZR;Piva, PG
具有多达五个明确电子壳层的人造原子是使用自组装量子点制造的：通过分子束外延生长的（QD）。状态填充。受限电子和空穴之间的零维跃迁光谱表明能级很容易调节。通过调整生长温度或生长后退火，可以获得一到五个限制能级，其能级间距在 25 到 90 meV 之间。 InAsiGaAs QD 技术的均匀性和再现性：通过调整影响 QD 的演化和平衡形状的生长参数来优化：沉积的应变材料的量以及 InAs 沉积后的退火时间。明确的激发态艺术：也通过垂直自组装量子点的堆叠层获得。
Artificial atoms with up to five well-defined electronic shells are fabricated using self-assembled quantum dots: (QD's) grown by molecular-beam epitaxy. State-filling. spectroscopy of the zero-dimensional transitions between confined electrons and holes demonstrates that the energy levels are readily tunable. One to five confined levels, with an interlevel energy spacing between 25 and 90 meV, are obtained by adjusting the growth temperature or with post growth annealings. The uniformity and reproducibility of InAsiGaAs QD's art: optimized by adjusting growth parameters affecting the evolution and the equilibrium shape of the QD's: the amount of strained material deposited, and the annealing time following the InAs deposition. Well-defined excited states art: also obtained with stacked layers of vertically self-assembled QD's.