Accurate electron affinity of V and fine-structure splittings of V- via slow-electron velocity-map imaging.
Accurate electron affinity of V and fine-structure splittings of V- via slow-electron velocity-map imaging.
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DOI：
10.1103/physreva.93.052508
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发表时间：
2016-05
期刊：
影响因子：
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通讯作者：
Xiaoxi Fu;Zhihong Luo;Xiaolin Chen;Jia-ming Li;C. Ning
中科院分区：
文献类型：
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作者：
Xiaoxi Fu;Zhihong Luo;Xiaolin Chen;Jia-ming Li;C. Ning
本文报道了用慢电子速度图成像方法获得的负钒离子的高分辨率光电子能谱。V的电子亲和力为4255.9(18)cm-1或0.527 66(20)eV。准确度比以前的测量提高了60倍。V-的精细结构在基态5D0以上分别为35.9(11)（5D1）、103.8(12)（5D2）、204.17(74)（5D3）和330.58(40)cm-1 （5D4）。
We report the high-resolution photoelectron spectra of negative vanadium ions obtained via the slow-electron velocity-map imaging method. The electron affinity of V was determined to be 4255.9(18) cm-1 or 0.527 66(20) eV. The accuracy was improved by a factor of 60 with regard to the previous measurement. The fine structure of V- was well resolved: 35.9(11) (5D1), 103.8(12) (5D2), 204.17(74) (5D3), and 330.58(40) cm-1 (5D4) above the ground state 5D0, respectively.