Direct modulation of 1.3 μm quantum dot lasers on silicon at 60 °C.
Direct modulation of 1.3 μm quantum dot lasers on silicon at 60 °C.
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DOI：
10.1364/oe.24.018428
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发表时间：
2016-08
期刊：
影响因子：
3.8
通讯作者：
Yuan-Hsuan Jhang;R. Mochida;K. Tanabe;K. Takemasa;M. Sugawara;S. Iwamoto;Y. Arakawa
中科院分区：
文献类型：
--
作者：
Yuan-Hsuan Jhang;R. Mochida;K. Tanabe;K. Takemasa;M. Sugawara;S. Iwamoto;Y. Arakawa
我们演示了在 Si 上直接调制 InAs/GaAs 量子点 (QD) 激光器。通过紫外激活直接键合方法将 Fabry-Pérot QD 激光器集成在 Si 上，并使用没有 HR/AR 涂层的解理面形成腔体。粘合激光器在室温下连续波泵浦下运行，阈值电流为 41 mA，最大输出功率为 30 mW（单面）。即使具有如此简单的器件结构和制造工艺，我们的键合激光器也可以使用 10 Gbps 不归零信号直接调制，室温下消光比为 1.9 dB。此外，在高达 60 °C 的温度下，无需任何电流或电压调整即可实现消光比为 4.5 dB 的 6 Gbps 调制。这些器件性能结果表明，Si 上的 III-V QD 激光器在光子集成电路的应用中取得了令人鼓舞的成果。
We demonstrate direct modulation of an InAs/GaAs quantum dot (QD) laser on Si. A Fabry-Pérot QD laser was integrated on Si by an ultraviolet-activated direct bonding method, and a cavity was formed using cleaved facets without HR/AR coatings. The bonded laser was operated under continuous-wave pumping at room temperature with a threshold current of 41 mA and a maximum output power of 30 mW (single facet). Even with such a simple device structure and fabrication process, our bonded laser is directly modulated using a 10 Gbps non-return-to-zero signal with an extinction ratio of 1.9 dB at room temperature. Furthermore, 6 Gbps modulation with an extinction ratio of 4.5 dB is achieved at temperatures up to 60 °C without any current or voltage adjustment. These results of device performances indicate an encouraging demonstration on III-V QD lasers on Si for the applications of the photonic integrated circuits.