SILICON-NEURON JUNCTION - CAPACITIVE STIMULATION OF AN INDIVIDUAL NEURON ON A SILICON CHIP
SILICON-NEURON JUNCTION - CAPACITIVE STIMULATION OF AN INDIVIDUAL NEURON ON A SILICON CHIP
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DOI：
10.1103/physrevlett.75.1670
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发表时间：
1995-08-21
影响因子：
8.6
通讯作者：
STETT, A
中科院分区：
文献类型：
--
作者：
FROMHERZ, P;STETT, A
水蛭的一个已识别的神经细胞附着在一个平面硅微结构上，该微结构由一层薄薄的绝缘氧化硅覆盖的p型掺杂硅构成。在硅和电解质之间施加电压阶跃，在细胞中诱导电容性瞬变，从而激发动作电位。电容性细胞外刺激由等效电四极描述。
An identified nerve cell of the leech is attached to a planar silicon microstructure of p-doped silicon covered by a thin layer of insulating silicon oxide. A voltage step, applied between silicon and electrolyte, induces a capacitive transient in the cell which elicits an action potential. The capacitive extracellular stimulation is described by an equivalent electrical four-pole.