Deposition of high-quality NiMnSb magnetic thin films at moderate temperatures
Deposition of high-quality NiMnSb magnetic thin films at moderate temperatures
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中等温度下沉积高质量 NiMnSb 磁性薄膜
DOI：
10.1063/1.363977
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发表时间：
1997
影响因子：
3.2
通讯作者：
R. Morel
中科院分区：
文献类型：
--
作者：
J. A. Caballero;Y. Park;A. Cabbibo;J. Childress;F. Petroff;R. Morel
铁磁 Heusler 合金 NiMnSb 薄膜因其预测的半金属（即 100% 自旋极化）传输特性而受到磁性多层器件的关注，已通过射频磁控管溅射从单个复合靶材成功沉积。低氩气压、低沉积速率和适中的衬底温度（250-350°C）的新颖组合被证明可以产生高质量、低粗糙度的C1b型晶体结构的多晶薄膜，厚度低至100埃，且无需任何沉积后退火。这些薄膜的结构特性由 X 射线衍射和原子力显微镜确定，显示为沉积条件的函数。磁性和电阻率与块状 MiMnSb 一致，这表明它们将有效地作为多层薄膜结构中的自旋极化导电层。
Thin films of the ferromagnetic Heusler alloy NiMnSb, of interest for magnetic multilayer devices because of their predicted half-metallic (i.e., 100% spin-polarized) transport properties, have been successfully deposited by rf magnetron sputtering from a single composite target. A novel combination of low argon gas pressure, low deposition rates, and moderate substrate temperatures (250–350 °C) are shown to result in high-quality, low-roughness polycrystalline films of the C1b-type crystal structure, with thicknesses as low as 100 A, without the need for any post-deposition annealing. The structural properties of these films, determined by x-ray diffraction and atomic force microscopy are presented as a function of deposition conditions. The magnetic properties and resistivity are consistent with bulk MiMnSb, which suggests that they will be effective as spin-polarized conducting layers in multilayer thin-film structures.