Controlled improvement in specific contact resistivity for thermoelectric
Controlled improvement in specific contact resistivity for thermoelectric
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DOI：
10.1063/1.4816054
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发表时间：
2013-06
期刊：
影响因子：
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通讯作者：
P. Taylor;J. Maddux;G. Meissner;R. Venkatasubramanian;G. Bulman;J. Pierce;Rahul Gupta;J. Bierschenk;C. Caylor;J. D'Angelo;Z. Ren
中科院分区：
文献类型：
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作者：
P. Taylor;J. Maddux;G. Meissner;R. Venkatasubramanian;G. Bulman;J. Pierce;Rahul Gupta;J. Bierschenk;C. Caylor;J. D'Angelo;Z. Ren
为了获得降低的比接触电阻率，将碘供体和银受体分别离子注入到n型和p型（Bi，Sb）2（Se，Te）3材料中，以实现表面掺杂高出10倍以上。注入n型材料导致比接触电阻率从1.7 × 10 - 6 Ω cm 2降低到4.5 × 10 - 7 Ω cm 2。注入到p型材料中导致比接触电阻率从7.7 × 10−7 Ω cm 2下降到2.7 × 10−7 Ω cm 2。对于注入的薄膜超晶格，未注入的1.4 × 10−7 Ω cm 2和5.3 × 10−8 Ω cm 2的值在注入后突然下降到检测极限以下，≤10−8 Ω cm 2。比接触电阻率的这些降低与穿过接触的隧穿的增加一致。
To obtain reduced specific contact resistivity, iodine donors and silver acceptors were ion-implanted into n-type and p-type (Bi,Sb)2(Se,Te)3 materials, respectively, to achieve >10 times higher doping at the surface. Implantation into n-type materials caused the specific contact resistivity to decrease from 1.7 × 10−6 Ω cm2 to 4.5 × 10−7 Ω cm2. Implantation into p-type materials caused specific contact resistivity to decrease from 7.7 × 10−7 Ω cm2 to 2.7 × 10−7 Ω cm2. For implanted thin-film superlattices, the non-implanted values of 1.4 × 10−7 Ω cm2 and 5.3 × 10−8 Ω cm2 precipitously dropped below the detection limit after implantation, ≤10−8 Ω cm2. These reductions in specific contact resistivity are consistent with an increase in tunneling across the contact.