Low‐resistivity p‐type ZnSe:N grown by molecular beam epitaxy using a nitrogen free‐radical source
Low‐resistivity p‐type ZnSe:N grown by molecular beam epitaxy using a nitrogen free‐radical source
复制标题
使用氮自由基源通过分子束外延生长低电阻率 p 型 ZnSe:N
DOI：
10.1116/1.577713
复制
发表时间：
1992
期刊：
影响因子：
--
通讯作者：
R. Park
中科院分区：
文献类型：
--
作者：
R. Park
提供稳定的、低电阻率的p型ZnSe外延材料（用于制造ZnSe基短波长（蓝色/绿色）二极管激光器的必要成分）多年来一直是一个难以实现的目标。然而，最近开发的掺杂技术，已被用于将氮杂质纳入ZnSe在分子束外延生长过程中，在这方面表现出良好的前景。新的掺杂技术涉及使用射频等离子体放电，氮自由基源，为生长中的ZnSe表面提供高活性氮物质。如将在本文中所描述的，远程（基板）放电等离子体包含一个显着的浓度的基态N原子的氮等离子体本身的分子发射光谱研究证明，它是假定的N（4S）原子从源散发的分数是负责增强氮掺杂的ZnSe外延层的反应性物种。目前，ZnSe：N外延层具有B...
The provision of stable, low‐resistivity p‐type ZnSe epitaxial material, a necessary ingredient for the fabrication of ZnSe‐based short‐wavelength (blue/green) diode lasers, has been an elusive goal for many years. However, a recently developed doping technique which has been employed to incorporate nitrogen impurities into ZnSe during molecular beam epitaxial growth shows excellent promise in this regard. The new doping technique involves the use of an rf plasma discharge, nitrogen free‐radical source which supplies highly reactive nitrogen species to the growing ZnSe surface. As will be described in this paper, the remote (to the substrate) discharge plasma contains a significant concentration of ground state N atoms as evidenced by molecular emission spectroscopy studies of the nitrogen plasma itself and it is postulated that the fraction of N(4S) atoms which emanate from the source are the reactive species responsible for enhanced nitrogen doping of the ZnSe epilayers. To date, ZnSe:N epilayers have b...