Strain splitting of 1s yellow orthoexciton of epitaxial orthorhombic Cu2O films on MgO [110]
Strain splitting of 1s yellow orthoexciton of epitaxial orthorhombic Cu2O films on MgO [110]
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MgO 上外延正交 Cu2O 薄膜 1s 黄色正激子的应变分裂 [110]
DOI：
10.1103/physrevb.66.245315
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
R. Chang
中科院分区：
文献类型：
--
作者：
Yi Sun;K. Rivkin;J. Chen;J. Ketterson;P. R. Markworth;R. Chang
研究了在MgO@110#衬底上外延生长的正交体氧化亚铜薄膜的光学性质。吸收测量表明，在n55p处有清晰的激子峰。在2K下的光致发光在610 nm附近有几个尖锐的发射峰，与不同的1 S正激子能级的分裂有关。峰随温度的演化表明，在较高能量的三个峰是1S黄色正激子的直接复合，而在较低能量的三个峰是它们的声子复制品。每个能级的对称性由其光致发光发射的偏振特性来确定。观测到的能级分裂被用来计算相干应变，这是基于Waters等人早先提出的能级分裂的参数化理论。基于已知的电子态对称性。将预测的应变与X射线衍射法测量的晶格参数进行了比较。
We investigated the optical properties of epitaxial orthorhomic cuprous oxide films grown on MgO@110#. Absorption measurements show clear excitonic peaks up to n55p. Photoluminescence at 2 K shows several sharp emission peaks in the vicinity of 610 nm associated with a splitting of various 1 s orthoexciton energy levels. The evolution of the peaks with temperature indicates that three peaks at higher energy are due to direct recombination of 1s yellow orthoexcitons and three corresponding peaks at lower energy are their phonon replicas. The symmetry of each level is identified by the polarization properties of their photoluminescence emissions. The observed splitting of the energy levels is used to calculate the coherency strain based on an earlier-parametrized theory for the level splitting by Waters et al. based on the known symmetry of the electronic states. This predicted strain is compared with that determined by x-ray diffraction measurements of the measured lattice parameters.