On the metallic bonding of GaN-based vertical light-emitting diode
On the metallic bonding of GaN-based vertical light-emitting diode
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DOI：
10.1016/j.mssp.2017.02.025
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发表时间：
2017-06
影响因子：
4.1
通讯作者：
M. Khan;P. Trimby;Hongwei Liu;R. Zheng
中科院分区：
文献类型：
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作者：
M. Khan;P. Trimby;Hongwei Liu;R. Zheng
本文采用扫描电子显微镜(SEM)中的透射菊池衍射(TKD)和能量色散X射线能谱(EDS)相结合的方法，系统地研究了GaN基垂直发光二极管(VLED)中的金属键合。基于扫描电子显微镜的TKD和EDS分析了金属连接的化学成分、晶粒形态、取向和相，而透射电子显微镜(TEM)提供了金属扩散连接的纳米级特征，以及与界面相关的缺陷和纳米孪晶界。我们的扫描电子显微镜-TKD和透射电子显微镜技术的结果为金属键合及其未来的优化提供了无与伦比的洞察。
In this work, metallic bonding in GaN-based vertical light-emitting diode (VLED) is systematically characterized by using combined methodology of transmission Kikuchi diffraction (TKD) and energy dispersive X-ray spectroscopy (EDS) in a scanning electron microscope (SEM). SEM-based TKD with EDS identifies chemical composition, grain morphology, orientation, and phases at metallic bonding, while transmission electron microscopy (TEM) provides nanoscale characteristics of metallic diffusion bonding, and its interface-related defects and nano-twinned boundaries. Our results from SEM-TKD and TEM techniques provide unparalleled insight into the metallic bonding, and its future optimization.