Thermoluminescence of Light and X-Ray Irradiated Semiconductor-Doped Glasses

Thermoluminescence of Light and X-Ray Irradiated Semiconductor-Doped Glasses
复制标题

光和 X 射线照射半导体掺杂玻璃的热致发光

DOI:
10.1143/jjap.41.5262
复制
发表时间:
2002
影响因子:
1.5
通讯作者:
T. Kaneda
T. Kaneda
中科院分区:
物理与天体物理4区
文献类型:
--
作者:
T. Miyoshi;Y. Makidera;T. Kawamura;S. Kashima;N. Matsuo;T. Kaneda

文献摘要

被引文献

相似文献

在光和X射线照射下,观察到了硫化镉掺杂玻璃和光照射下的硫化镉掺杂玻璃的热释光。测量了热释光强度随辐照强度和辐照时间的变化关系。讨论了硫化镉掺杂玻璃作为辐射剂量计材料的适用性。
Thermoluminescence has been observed in light and X-ray irradiated CdS-doped glasses and light irradiated CdSSe-doped glasses. The intensity of thermoluminescence was measured as a function of irradiation intensity and irradiation time. Applicability of CdS-doped glasses as a material for a radiation dosimeter was discussed.