The analysis and characteristics of 4H-SiC floating junction JBS diodes with different structures underneath the termination region
The analysis and characteristics of 4H-SiC floating junction JBS diodes with different structures underneath the termination region
复制标题
终端区下方不同结构的4H-SiC浮结JBS二极管分析及特性
DOI：
10.1016/j.sse.2019.05.016
复制
发表时间：
2019
影响因子：
1.7
通讯作者：
Yuming Zhang
中科院分区：
文献类型：
--
作者：
Hao Yuan;Xiaoyan Tang;Qingwen Song;Yanjing He;Xiaoning He;Yimen Zhang;Yuming Zhang
