Characteristics of Coupling Capacitance Between Signal-Ground TSVs Considering MOS Effect in Silicon Interposers
Characteristics of Coupling Capacitance Between Signal-Ground TSVs Considering MOS Effect in Silicon Interposers
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DOI：
10.1109/ted.2015.2494538
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发表时间：
2015-11
影响因子：
3.1
通讯作者：
R. Fang;Xin Sun;M. Miao;Yufeng Jin
中科院分区：
文献类型：
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作者：
R. Fang;Xin Sun;M. Miao;Yufeng Jin
随着硅通孔 (TSV) 在 3D 系统（例如数字、逻辑和存储模块）中的广泛应用，TSV 之间耦合电容的精确建模对于系统设计的信号完整性分析变得不可或缺。本文研究了浮置基板中信号-接地 TSV 之间的电位、电场和电荷的静态特性，并相应地在静态和高频情况下准确建模和分析了 MOS 电容对信号与接地 TSV 之间耦合电容的影响。此外，还探讨了衬底导纳对电容电压依赖性的影响。通过参数研究来研究不同物理和材料参数对耦合电容的影响，包括 TSV 半径、衬垫厚度、掺杂浓度、氧化物电荷量和 TSV 填充材料的功函数。基于所提出的模型，研究并解释了耦合电容对瞬态噪声的非线性影响。
Along with extensive applications of through-silicon vias (TSVs) in 3-D systems, such as digital, logic, and memory modules, the accurate modeling of coupling capacitance between the TSVs is becoming indispensable to the signal integrity analysis of the system design. In this paper, the static characteristics of potential, electric field, and charges between signal-ground TSVs in a floating substrate are investigated, and accordingly, the effect of MOS capacitance on the coupling capacitance between signal and ground TSVs is accurately modeled and analyzed for both static and high-frequency situations. Furthermore, the impact of substrate admittance on the capacitance-voltage dependence is explored. Parametric studies are performed to study the effects of different physical and material parameters on the coupling capacitance, which include TSV radius, liner thickness, doping concentration, amount of oxide charges, and work function of TSV filling materials. Based on the proposed model, the nonlinear effect of the coupling capacitance on transient noise is examined and explained.