Spin-valve-like magnetoresistance in a Ni-Mn-In thin film
Spin-valve-like magnetoresistance in a Ni-Mn-In thin film
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Ni-Mn-In 薄膜中的自旋阀式磁阻
DOI：
10.1103/physrevb.97.214427
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发表时间：
2018-06-25
影响因子：
3.7
通讯作者：
Li, Run-Wei
中科院分区：
文献类型：
--
作者：
Agarwal, Sandeep;Wang, Baomin;Li, Run-Wei
自旋阀器件的电阻状态通过切换自由铁磁层相对于钉扎铁磁层的磁化来控制，其依赖于有源介质内的电子散射来工作。在这里，我们证明了自旋阀在Ni-Mn-In薄膜，这是由一个铁磁相嵌入在反铁磁矩阵的效果。通过传输和磁性测量，我们确认，在两相之间的界面处的散射引起的单向各向异性和自旋阀在这个系统中的效果。在10-400 K温度范围内，自旋阀类磁电阻的大小是稳定的（10 K时约为0.4%）。即使在100 k Ω e的高磁场下，低阻态和高阻态也不能被破坏。这一发现开辟了一种在具有竞争铁磁和反铁磁相互作用的材料中实现自旋阀效应的方法，其中这些相之间的界面充当活性介质。
Spin valve devices, the resistive state of which is controlled by switching the magnetization of a free ferromagnetic layer with respect to a pinned ferromagnetic layer, rely on the scattering of electrons within the active medium to work. Here we demonstrate spin-valve-like effect in the Ni-Mn-In thin films, which consists of a ferromagnetic phase embedded in an antiferromagnetic matrix. Through transport and magnetic measurements, we confirm that scattering at the interfaces between the two phases gives rise to a unidirectional anisotropy and the spin-valve-like effect in this system. The magnitude of the spin-valve-like magnetoresistance (about 0.4% at 10 K) is stable within the temperature range of 10-400 K. The low- and high-resistance states cannot be destroyed even under a high magnetic field of 100 k Omega e. This finding opens up a way of realizing the spin valve effect in materials with competing ferromagnetic and antiferromagnetic interactions, where the interface between these phases acts as the active medium.