Analysis of breakdown in ferromagnetic tunnel junctions
Analysis of breakdown in ferromagnetic tunnel junctions
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铁磁隧道结击穿分析
DOI：
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发表时间：
1999
期刊：
影响因子：
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通讯作者：
W. D. Jonge
中科院分区：
文献类型：
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作者：
W. Oepts;H. Verhagen;R. Coehoorn;W. D. Jonge
由于其非常薄的隧道势垒层，磁性隧道结在1 V量级的电压下显示出介电击穿。在击穿的时刻，在势垒中形成高度导电的短路，并且作为热点可见。击穿效应的影响进行了研究，通过一系列名义上相同的Co/Al 2 O3/Co隧道结的电压斜坡实验。的结果中描述的依赖于电压的击穿概率，并进一步分析的框架内的一般模型的击穿概率在介电材料，其中它被假定为在任何时候的击穿概率是独立的（可能依赖于时间）的电压，已被预先应用。实验数据可以用电压击穿概率函数的几种具体形式来描述。与通常用于描述薄膜SiO2击穿的模型的比较，以及对未来实验的建议。
Due to their very thin tunnel barrier layer, magnetic tunnel junctions show dielectric breakdown at voltages of the order of 1 V. At the moment of breakdown, a highly conductive short is formed in the barrier and is visible as a hot spot. The breakdown effect is investigated by means of voltage ramp experiments on a series of nominally identical Co/Al2O3/Co tunnel junctions. The results are described in terms of a voltage dependent breakdown probability, and are further analyzed within the framework of a general model for the breakdown probability in dielectric materials, within which it is assumed that at any time the breakdown probability is independent of the (possibly time-dependent) voltage that has been previously applied. The experimental data can be described by several specific forms of the voltage breakdown probability function. A comparison with the models commonly used for describing thin film SiO2 breakdown is given, as well as suggestions for future experiments.