Density of states of disordered topological superconductor-semiconductor hybrid nanowires
Density of states of disordered topological superconductor-semiconductor hybrid nanowires
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DOI：
10.1103/physrevb.88.064506
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发表时间：
2013-05
影响因子：
3.7
通讯作者：
J. Sau;S. Sarma
中科院分区：
文献类型：
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作者：
J. Sau;S. Sarma
使用 Bogoliubov-de Gennes (BdG) 方程，我们数值计算了无序半导体纳米线的无序平均状态密度，这些半导体纳米线通过自旋轨道耦合、塞曼自旋分裂和附近超导体引起的 s 波超导邻近效应驱动进入假定的拓扑 p 波超导相。与处理无序效应的相应理论自洽玻恩近似（SCBA）结果进行比较，我们评论了存在增加无序情况下系统的拓扑相图。尽管无序性强烈抑制了与马约拉纳零模式相关的零偏置峰值（ZBP），但即使 SCBA 理论中的拓扑间隙由于无序性而基本上消失，我们仍然发现了 ZBP 的一些明显残余。我们明确比较了拓扑相和平凡相中无序对状态数值密度的影响。
Using Bogoliubov-de Gennes (BdG) equations we numerically calculate the disorder averaged density of states of disordered semiconductor nanowires driven into a putative topological p-wave superconducting phase by spin-orbit coupling, Zeeman spin splitting and s-wave superconducting proximity effect induced by a nearby superconductor. Comparing with the corresponding theoretical self-consistent Born approximation (SCBA) results treating disorder effects, we comment on the topological phase diagram of the system in the presence of increasing disorder. Although disorder strongly suppresses the zero-bias peak (ZBP) associated with the Majorana zero mode, we find some clear remnant of a ZBP even when the topological gap has essentially vanished in the SCBA theory because of disorder. We explicitly compare effects of disorder on the numerical density of states in the topological and trivial phases.